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NPN Silicon Transistor JSMSEMI S8050 Featuring 25 Volt Collector Emitter Voltage and 0.5 Amp Current

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NPN Silicon Transistor JSMSEMI S8050 Featuring 25 Volt Collector Emitter Voltage and 0.5 Amp Current

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 625mW

Transition frequency(fT) : 150MHz

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 25V

Description : Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 625mW Through Hole TO-92

Mfr. Part # : S8050

Model Number : S8050

Package : TO-92

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Product Overview

The S8050 is an NPN Silicon General Purpose Transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current rating of IC = 0.5 A.

Product Attributes

Brand: JSMICRO Semiconductor
Model: S8050
Type: NPN Silicon General Purpose Transistor
Complementary to: S8550

Technical Specifications

Parameter	Symbol	Ratings	Unit	Test Conditions
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	5	V
Collector Current	IC	500	mA
Total Power Dissipation	PD	625	mW	Ta = 25C
Junction, Storage Temperature	TJ, TSTG	-55 ~ +150
Collector-base Breakdown Voltage	V(BR)CBO	40	V	IC = 100 A, IE = 0
Collector-emitter Breakdown Voltage	V(BR)CEO	25	V	IC = 0.1 mA, IB = 0
Emitter-base Breakdown Voltage	V(BR)EBO	5	V	IE = 100 A, IC = 0
Collector Cut-off Current	ICBO	0.1	A	VCB = 40 V, IE = 0
Collector Cut-off Current	ICEO	0.1	A	VCE = 20 V, IB = 0
Emitter Cut-off Current	IEBO	0.1	A	VEB = 5 V, IC = 0
DC Current Gain	hFE(1)	85 - 400		VCE = 1 V, IC = 50 mA
DC Current Gain	hFE(2)	50 -		VCE = 1 V, IC = 500 mA
Collector-emitter Saturation Voltage	VCE(sat)	0.6	V	IC = 500 mA, IB = 50 mA
Base-emitter Saturation Voltage	VBE(sat)	1.2	V	IC = 500 mA, IB = 50 mA
Transition Frequency	fT	150	MHz	VCE = 6 V, IC= 20 mA, f = 30 MHz

2401050928_JSMSEMI-S8050_C2931492.pdf

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