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Lead Free Complementary NPN PNP Small Signal Transistors DIODES DCX123JH-7 Halogen and Antimony Free

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Lead Free Complementary NPN PNP Small Signal Transistors DIODES DCX123JH-7 Halogen and Antimony Free

Output Voltage(VO(on)) : 360mV

Resistor Ratio : -

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 150mW Surface Mount SOT-563

Mfr. Part # : DCX123JH-7

Model Number : DCX123JH-7

Package : SOT-563

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Product Overview

The DCX (xxxx) H series are complementary NPN/PNP small signal transistors featuring epitaxial planar die construction and built-in biasing resistors. These devices are designed for general-purpose applications and offer advantages such as being totally lead-free, fully RoHS compliant, and halogen/antimony-free ("Green" device).

Product Attributes

  • Brand: Diodes Incorporated
  • Certifications: Fully RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. Green Device (Note 3)
  • Case Material: Molded Plastic Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208

Technical Specifications

Part NumberR1R2MarkingNPN VCC (V)NPN VIN (V)NPN IO (mA)PNP VCC (V)PNP VIN (V)PNP IO (mA)PD (mW)RJA (C/W)TJ, TSTG (C)
DCX124EH22k22kC1750-10 to +4030-50+10 to -40-30150833-55 to +150
DCX144EH47k47kC2050-10 to +4030-50+10 to -40-30150833-55 to +150
DCX143EH4.7k47kC0850-10 to +30100-50+10 to -30-100150833-55 to +150
DCX114YH10k47kC1450-6 to +4070-50+6 to -40-70150833-55 to +150
DCX123JH2.2k47kC0650-5 to +12100-50+5 to -12-100150833-55 to +150
DCX114EH10k10kC1350-10 to +4050-50+10 to -40-50150833-55 to +150
DCX143TH4.7k-C0750-5V Max100-50+5V max-100150833-55 to +150
DCX114TH10k-C1250-5V Max100-50+5V max-100150833-55 to +150
Characteristic (DCX143TH & DCX114TH Only)SymbolMinTypMaxUnitTest Condition
Collector-Base Breakdown VoltageBVCBO50--VIC = 50A
Collector-Emitter Breakdown VoltageBVCEO50--VIC = 1mA
Emitter-Base Breakdown VoltageBVEBO5--VIE = 50A
Collector Cut-Off CurrentICBO--0.5AVCB = 50V
Emitter Cut-Off CurrentIEBO--0.5AVEB = 4V
Collector-Emitter Saturation VoltageVCE(SAT)--0.3VIC/IB = 2.5mA / 0.25mA (DCX143TH)
Collector-Emitter Saturation VoltageVCE(SAT)--0.3VIC/IB = 1mA / 0.1mA (DCX114TH)
DC Current Transfer RatiohFE100250600-IC = 1mA, VCE = 5V
Gain-Bandwidth ProductfT-250-MHzVCE = 10V, IE = 5mA, f = 100MHz
CharacteristicSymbolMinTypMaxUnitTest Condition
Input Voltage (OFF)Vl(OFF)0.3-1.1VVCC = 5V, IO = 100A
Input Voltage (ON)Vl(ON)1.1-3.0VVO = 0.3V, IO = 5mA
Output Voltage (ON)VO(ON)-0.10.3VIO/Il = 10mA / 0.5mA
Input CurrentIl--3.6mAVI = 5V
Output Current (OFF)IO(OFF)--0.5AVCC = 50V, VI = 0V
DC Current GainGl20-80-VO = 5V, IO = 5mA

2308101656_DIODES-DCX123JH-7_C5245727.pdf


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