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Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for Motor Drive Applications

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Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for Motor Drive Applications

Voltage - Supply : 13.5V~16.5V

Quiescent Current(Iq) : 360uA

High-side Bias Voltage(Vbs) : 13.5V~16.5V

Configuration : Half Bridge

Operating temperature : -40℃~+150℃

Voltage - Isolation : 1500Vrms

Frequency - Switching : 20kHz

Description : 20kHz PQFN-26(5x6) Power Driver Modules RoHS

Mfr. Part # : NSH505PQ

Model Number : NSH505PQ

Package : PQFN-26(5x6)

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NSH505PQ 5A, 500V Half-Bridge IPM

The NSH505PQ is a 5A, 500V half-bridge intelligent power module designed for motor drive applications. It integrates MOSFET gate drivers and bootstrap functionality within a compact PQFN 5x6mm package, offering flexible application for single-phase and three-phase DC brushless motor drives. Key features include under-voltage lockout for both channels, high-level effective input support (3.3V, 5V, and 15V), integrated gate drivers with bootstrap functionality, temperature detection output for MCU control, cross-conduction prevention logic, and high isolation (1500 VRMS min). It boasts a 500V maximum operating voltage and a 5A peak pulse current capability at 25C.

Product Attributes

  • Brand: NSIC Technology (Wuxi) Co., LTD
  • Origin: Wuxi, China
  • Product Name: NSH505PQ
  • Package Type: PQFN5x6
  • Body Size: 5mm x 6mm

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDSS (Drain-Source Voltage of Each MOSFET) TC = 25C 500 V
ID (Each MOSFET Current, Continuous) TC = 25C 2.5 A
ID (Each MOSFET Current, Continuous) TC = 75C 1.75 A
IDM (Each MOSFET Pulse Current, Peak) TC = 25C, < 100us 5 A
IDM (Each MOSFET Pulse Current, Peak) TC = 75C 3.5 A
IDrms (Each MOSFET Current, Rms) TC = 25C, FPWM <20KHz 0.85 Arms
PD (Maximum Power Dissipation for each MOSFET) TC = 25C 14.2 W
VCC (Control Supply Voltage) Applied between VCC and COM 20 V
VBS (High-side Bias Voltage) Applied between VB and VS 20 V
VIN (Input Signal Voltage) Applied between VIN and COM -0.3 VCC+0.3 V
VRRMB (Maximum Repetitive Reverse Voltage) Tc = 25C 500 V
IFB (Forward Current) Tc = 25C 0.25 A
IFPB (Forward Peak Current, Peak) Tc = 25C, < 1mS 0.5 A
Tj (Operating Junction Temperature) -40 150
TSTG (Storage Temperature) Tc = 25C -40 125
ISO (Isolation Voltage) 60Hz, Sinusoidal, AC 1 min, between pins and heat-sink plate 1500 Vrms
Rth(J-B) (Thermal resistance, junction to mounting pad, each MOSFET) For Each MOSFET 1.0 C/W
Rth(J-A) (Thermal resistance, junction to ambient, each MOSFET) For Each MOSFET 40 C/W
Recommended Operating Conditions
VPN (Supply Voltage) Applied between P and N 300 450 V
VCC (Control Supply Voltage) Applied between VCC and COM 13.5 15.0 16.5 V
VBS (High-Side Bias Voltage) Applied between VB and VS 13.5 15.0 16.5 V
VIN(ON) (Input ON Threshold Voltage) Applied between VIN and COM 3.0 VCC V
VIN(OFF) (Input OFF Threshold Voltage) 0 0.6 V
tded (Blanking Time for Preventing Arm-Short) VCC = VBS = 13.5 ~ 16.5 V, Tj <150C 1.0 s
FPWM (PWM Switching Frequency) Tj <150C 15 20 kHz
Electrical Characteristics
BVDSS (Drain - Source Breakdown Voltage) VIN = 0 V, ID = 1 mA 500 V
IDSS (Zero Gate Voltage Drain Current) VIN = 0 V, VDS = 500 V 1 mA
VSD (Drain - Source Diode Forward Voltage) VCC = VBS = 15V, VIN = 0 V, ID =-0.5 A 0.9 V
RDS(on) (Drain-Source Turn-On Resistance) VCC = VBS = 15 V, VIN = 5 V, ID =0.5 A 2 2.5 ohm
tON (Switching Times) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 920 ns
tOFF (Switching Times) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 520 ns
trr (Switching Times) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 210 ns
EON (Switching Energy) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 40 J
EOFF (Switching Energy) VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH 10 J

2505091635_WXNSIC-NSH505PQ_C48735684.pdf


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