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SOT363 Package Double Transistor Nexperia NHUMD12X with Built In Resistors and 100 Milliamp Output Current

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SOT363 Package Double Transistor Nexperia NHUMD12X with Built In Resistors and 100 Milliamp Output Current

Emitter-Base Voltage VEBO : 10V

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 80V

Description : Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 80V 100mA 350mW Surface Mount TSSOP-6

Mfr. Part # : NHUMD12X

Model Number : NHUMD12X

Package : TSSOP-6

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Product Overview

The Nexperia NHUMD3/2/12 series comprises resistor-equipped double transistors (RET) in a compact SOT363 (SC-88) package. These NPN/PNP devices offer an 80 V breakdown voltage and 100 mA output current capability. Featuring built-in resistors, they simplify circuit design, reduce component count, and lower pick-and-place costs. These transistors are AEC-Q101 qualified, making them suitable for digital applications, controlling IC inputs, and switching loads, serving as a cost-effective alternative to BC846/BC856 series in digital contexts.

Product Attributes

Brand: Nexperia
Package Type: SOT363 (SC-88)
Certifications: AEC-Q101 qualified

Technical Specifications

Model	R1 (k)	R2 (k)	Package	Collector-Emitter Voltage (VCEO) (Max)	Output Current (IO) (Max)
NHUMD3	10	10	SOT363 (SC-88)	80 V	100 mA
NHUMD2	22	22	SOT363 (SC-88)	80 V	100 mA
NHUMD12	47	47	SOT363 (SC-88)	80 V	100 mA

Parameter	Conditions	Min	Typ	Max	Unit
Per transistor, for the PNP transistor with negative polarity
Collector-emitter voltage (VCEO)	Open base	-	-	80	V
Output current (IO)	-	-	-	100	mA
Collector-base voltage (VCBO)	Open emitter	-	-	80	V
Emitter-base voltage (VEBO)	Open collector	-	-	10	V
Collector cut-off current (ICBO)	VCB = 80 V; IE = 0 A	-	-	100	nA
Collector cut-off current (ICEO)	VCE = 60 V; IB = 0 A	-	-	100	nA
Collector cut-off current (ICEO)	VCE = 60 V; IB = 0 A; Tj = 150 C	-	-	5	A
DC current gain (hFE)	VCE = 5 V; IC = 10 mA	(See specific model values)	-	-	-
Collector-emitter saturation voltage (VCEsat)	IC = 10 mA; IB = 0.5 mA	-	-	100	mV
Transition frequency (fT)	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	(See specific model values)	-	MHz
Collector capacitance (Cc)	VCB = 10 V; IE = 0 A; f = 1 MHz	-	-	(See specific model values)	pF
Input voltage
NHUMD3, TR1 (NPN)	-	-10	-	+40	V
NHUMD3, TR2 (PNP)	-	-40	-	+10	V
NHUMD2, TR1 (NPN)	-	-10	-	+60	V
NHUMD2, TR2 (PNP)	-	-60	-	+10	V
NHUMD12, TR1 (NPN)	-	-10	-	+80	V
NHUMD12, TR2 (PNP)	-	-80	-	+10	V
Total power dissipation (Ptot)
Per device	Tamb 25 C [1]	-	-	235	mW
Per device	Tamb 25 C [1]	-	-	350	mW
Junction temperature (Tj)
-	-	-	-	150	C
Ambient temperature (Tamb)
-	-	-55	-	150	C
Storage temperature (Tstg)
-	-	-65	-	150	C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

Model	Bias resistor 1 (R1) (k)	Bias resistor ratio (R2/R1)	Emitter-base cut-off current (IEBO) (VEB = 7 V; IC = 0 A)	DC current gain (hFE) (VCE = 5 V; IC = 10 mA)	Transition frequency (fT) (VCE = 5 V; IC = 10 mA; f = 100 MHz)	Collector capacitance (Cc) (VCB = 10 V; IE = 0 A; f = 1 MHz)
NHUMD3	7 to 13	0.8 to 1.2	600 A	50	170 MHz	2.5 pF
NHUMD2	15.4 to 28.6	0.8 to 1.2	270 A	70	150 MHz	3 pF
NHUMD12	33 to 61	0.8 to 1.2	130 A	100	150 MHz	3 pF

Pin	Symbol	Description
1	GND1	GND (emitter) TR1
2	I1	Input (base) TR1
3	O2	Output (collector) TR2
4	GND2	GND (emitter) TR2
5	I2	Input (base) TR2
6	O1	Output (collector) TR1

Type number	Marking code [1]
NHUMD3	6M%
NHUMD2	6Q%
NHUMD12	6S%
[1] % = placeholder for manufacturing site code

2411272001_Nexperia-NHUMD12X_C3589068.pdf

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