Product Overview
The Nexperia PDTB1xxxT series comprises PNP resistor-equipped transistors (RETs) housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. These transistors offer a 500 mA output current capability and a 50 V collector-emitter voltage. Featuring built-in bias resistors with a typical ratio tolerance of 10%, they simplify circuit design and reduce component count. The series is AEC-Q101 qualified, suitable for high-temperature applications up to 175 C, and serves as a cost-saving alternative to BC807 or BC817 series transistors in digital applications. They are ideal for IC inputs control and switching loads.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23 (TO-236AB)
- Technology: PNP Resistor-Equipped Transistor (RET)
- Qualification: AEC-Q101
Technical Specifications
| Type Number | Package | NPN Complement | R1 (Typ) | R2 (Typ) | VCEO (Max) | IO (Max) |
| PDTB143ET | SOT23 (TO-236AB) | PDTD143ET | 4.7 k | 4.7 k | -50 V | -500 mA |
| PDTB143XT | SOT23 (TO-236AB) | PDTD143XT | 4.7 k | 10 k | -50 V | -500 mA |
| PDTB114ET | SOT23 (TO-236AB) | PDTD114ET | 10 k | 10 k | -50 V | -500 mA |
Applications
- IC inputs control
- Switching loads
- Digital applications
- High temperature applications
Marking Codes
| Type Number | Marking Code |
| PDTB143ET | *4X |
| PDTB143XT | *4Y |
| PDTB114ET | *09 |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VCBO | Collector-base voltage | open emitter | - | -50 | V |
| VCEO | Collector-emitter voltage | open base | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | -10 (PDTB143ET, PDTB114ET) / -7 (PDTB143XT) | V |
| VI | Input voltage | - | -30 to +10 (PDTB143ET, PDTB114ET) / -30 to +7 (PDTB143XT) | - | V |
| IO | Output current | - | - | -500 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | 320 | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | 460 | mW |
| Tj | Junction temperature | - | - | 175 | C |
| Tamb | Ambient temperature | - | -55 | +175 | C |
| Tstg | Storage temperature | - | -55 | +175 | C |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Thermal Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 470 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [2] | - | - | 327 | K/W |
[1] FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| ICBO | Collector-base cut-off current | VCB = -40 V; IE = 0 A | - | - | -100 | nA |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -50 V; IB = 0 A | - | - | -0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -0.9 (PDTB143ET) / -0.6 (PDTB143XT) / -0.4 (PDTB114ET) | mA |
| hFE | DC current gain | VCE = -5 V; IC = -50 mA | 60 (PDTB143ET) / 70 (PDTB143XT, PDTB114ET) | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -50 mA; IB = -2.5 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | -0.6 to -1.5 (PDTB143ET) / -0.5 to -1.1 (PDTB143XT) / -0.6 to -1.5 (PDTB114ET) | - | - | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -20 mA | -1.0 to -2.2 (PDTB143ET) / -1.0 to -2.0 (PDTB143XT) / -1.0 to -3.0 (PDTB114ET) | - | - | V |
| R1 | Bias resistor 1 (input) | - | 3.3 (PDTB143ET, PDTB143XT) / 7.0 (PDTB114ET) | 4.7 (PDTB143ET, PDTB143XT) / 10 (PDTB114ET) | 6.1 (PDTB143ET, PDTB143XT) / 13 (PDTB114ET) | k |
| R2/R1 | Bias resistor ratio | - | 0.9 (PDTB143ET, PDTB114ET) / 1.91 (PDTB143XT) | 1.0 (PDTB143ET, PDTB114ET) / 2.13 (PDTB143XT) | 1.1 (PDTB143ET, PDTB114ET) / 2.34 (PDTB143XT) | - |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | 11 | - | pF |
| fT | Transition frequency | VCE = -5 V; IC = -50 mA; f = 100 MHz | - | 140 | - | MHz |
Quality Information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
Package Outline
SOT23 (TO-236AB)
Dimensions in mm:
- Length: 2.8 to 3.0
- Width: 2.1 to 2.5
- Height: 0.9 to 1.4
- Lead pitch: 0.38 to 0.48
Soldering Footprints
Reflow soldering footprint and Wave soldering footprint dimensions are provided in the datasheet.
Contact Information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
2410121745_Nexperia-PDTB143ETR_C552140.pdf
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High Temperature Rated PNP Resistor Equipped Transistor Nexperia PDTB143ETR with 500 Milliamp Output Current Capability Images
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