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TO262K Package Plastic Encapsulated Thyristors JSCJ CT316R-800S 5 Layer Structure TRIACs for Power Control

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TO262K Package Plastic Encapsulated Thyristors JSCJ CT316R-800S 5 Layer Structure TRIACs for Power Control

Holding Current (Ih) : 15mA

Current - Gate Trigger(Igt) : 10mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 16A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 160A@20ms

SCR Type : 1 TRIAC

Gate Trigger Voltage (Vgt) : 1.3V

Operating Temperature : -40℃~+125℃@(Tj)

Description : 15mA 10mA 800V 1 TRIAC TO-262-3 TRIACs RoHS

Mfr. Part # : CT316R-800S

Model Number : CT316R-800S

Package : TO-262-3

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Product Overview

The CT316R series TRIACs are 5-layer structure devices designed for AC power control applications. They feature a mesa glass passivated technology, high junction temperature capability, and good commutation performance, making them suitable for various industrial and consumer electronics.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Origin: China (implied by company name and website)
Material: Plastic-Encapsulate Thyristors
Package Type: TO-262K
Certifications: Not specified

Technical Specifications

Part Number	VDRM/VRRM (V)	IT(RMS) (A)	VTM (V)	IGT (mA)	Package	Description
CT316R-600S/C/B	600	16	1.55	S: 10, C: 35, B: 50	TO-262K	NPNPN 5-layer Structure TRIACs
CT316R-800S/C/B	800	16	1.55	S: 10, C: 35, B: 50	TO-262K	NPNPN 5-layer Structure TRIACs

Absolute Ratings

Symbol	Parameter	Test Condition	Value	Unit
VDRM/VRRM	Repetitive peak off- state voltage	Tj=25	600 / 800	V
IT(RMS)	RMS on-state current		16	A
ITSM	Non repetitive surge peak on-state current	Full sine wave, tp=20ms	160	A
I2t	I2t value	tp=10ms	140	A2s
dIT/dt	Critical rate of rise of on-state current	IG=2*IGT, tr10ns, F=120HZ, Tj=125	50	A/s
IGM	Peak gate current	tp=20s, Tj=125	4	A
PG(AV)	Average gate power	Tj=125	1	W
TSTG	Storage temperature		-40~+150
Tj	Operating junction temperature		-40~+125

Electrical Characteristics

Symbol	Parameter	Test condition	Quadrant	Value	Unit
IGT	Gate trigger current	VD=12V, RL =33 , Tj=25	--	1.3	mA
				5	mA
VGT	Gate trigger voltage	IG =1.2IGT	--	5	V
VGD	Non-triggering gate voltage	VD=VDRM, Tj=125		0.2	V
IH	Holding current	IT =500mA	-	30	mA
				50	mA
IL	Latching current		-	50	mA
				80	mA
dVD/dt	Critical rate of rise of off-state	VD=67%VDRM, Gate Open, Tj=125		1000	V/s
VTM	On-state Voltage	ITM=23A, tp=380s		1.55	V
IDRM / IRRM	Repetitive peak off- state current	VD=VDRM/VRRM, Tj=25		10	A
		VD=VDRM/VRRM,Tj=125		1	mA

Thermal Resistances

Symbol	Parameter	Value	Unit
Rth (j-c)	Junction to case (AC)	1.2	/W
Rth (j-a)	Junction to ambient	45	/W

Applications

Heater Control
Mixer
Motor Speed Controller

2411121117_JSCJ-CT316R-800S_C527790.pdf

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