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Digital transistor NPN type ROHM DTC114EKAT146 featuring built in bias resistors for inverter and driver applications

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Digital transistor NPN type ROHM DTC114EKAT146 featuring built in bias resistors for inverter and driver applications

DC Current Gain : 30@5mA,5V

Current - Collector(Ic) : 50mA

type : NPN

Output Voltage(VO(on)) : 100mV

Transition frequency(fT) : 250MHz

Input Resistor : 10kΩ

Vce Saturation(VCE(sat)) : 300mV@500uA,10mA

Resistor Ratio : 1

Number : -

Pd - Power Dissipation : 200mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount TO-236-3(SOT-23-3)

Mfr. Part # : DTC114EKAT146

Model Number : DTC114EKAT146

Package : TO-236-3(SOT-23-3)

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Product Overview

The DTC114E series is a family of NPN digital transistors featuring built-in biasing resistors (R1 = R2 = 10k). This integrated design simplifies circuit configuration, allowing for inverter circuits without external input resistors. Ideal for applications requiring easy circuit design and on/off condition setting, the DTC114E series is suitable for inverter, interface, and driver functions. Complementary PNP types are available in the DTA114E series.

Product Attributes

  • Brand: ROHM
  • RoHS: Yes

Technical Specifications

Parameter Value Unit
General Parameters
Product Type Digital Transistor (Bias Resistor Built-in)
Transistor Type NPN
Maximum Collector Current (IC(MAX)) 100 mA
Built-in Resistor R1 10 k
Built-in Resistor R2 10 k
Applications INVERTER, INTERFACE, DRIVER
Absolute Maximum Ratings (Ta = 25C)
Supply Voltage (VCC) 50 V
Input Voltage (VIN) -10 to 40 V
Output Current (IO) 50 mA
Collector Current (IC(MAX)*1) 100 mA
Junction Temperature (Tj) 150
Storage Temperature Range (Tstg) -55 to +150
Electrical Characteristics (Ta = 25C)
Input Voltage VI(off) (VCC = 5V, IO = 100A) - 0.5 V
Input Voltage VI(on) (VO = 0.3V, IO = 10mA) 3.0 -
Output Voltage VO(on) (IO / II = 10mA / 0.5mA) - 100 to 300 mV
Input Current II (VI = 5V) - 880 A
Output Current IO(off) (VCC = 50V, VI = 0V) - 500 nA
DC Current Gain (GI) (VO = 5V, IO = 5mA) 30 -
Input Resistance R1 7 to 13 k
Resistance Ratio R2/R1 0.8 to 1.2 -
Transition Frequency (fT*1) (VCE = 10V, IE = -5mA, f = 100MHz) - 250 MHz
Power Dissipation (Ta = 25C)
DTC114EM 150 mW
DTC114EEB 150 mW
DTC114EE 150 mW
DTC114EUB 200 mW
DTC114EUA 200 mW
DTC114EKA 200 mW
Packaging Specifications
Part No. Package Package Size
DTC114EM SOT-723 1212
DTC114EEB SOT-416FL 1616
DTC114EE SOT-416 1616
DTC114EUB SOT-323FL 2021
DTC114EUA SOT-323 2021
DTC114EKA SOT-346 2928
Ordering Information
Part No. Package Basic ordering unit.(pcs)
DTC114EM SOT-723 8000
DTC114EEB SOT-416FL 3000
DTC114EE SOT-416 3000
DTC114EUB SOT-323FL 3000
DTC114EUA SOT-323 3000
DTC114EKA SOT-346 3000

1810122210_ROHM-DTC114EKAT146_C79971.pdf
Quality Digital transistor NPN type ROHM DTC114EKAT146 featuring built in bias resistors for inverter and driver applications for sale

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